Porous silicon - mechanisms of growth and applications

被引：125

作者：

Parkhutik, V ^{[1
]}

机构：

[1] Univ Politecn Valencia, Valencia 46071, Spain

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 06期

关键词：

D O I：

10.1016/S0038-1101(99)00036-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present state-of-the-art in understanding the mechanisms of the formation of porous silicon (PS) and its physical properties is reviewed, with special emphasis on problems which were not much in the focus of existing review literature: mechanisms of the pore growth, stability of the PS properties in environment and electrical properties of PS layers. Emerging applications of porous silicon in different fields of technology are outlined. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：1121 / 1141

页数：21

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