How molecular beam epitaxy (MBE) began and its projection into the future

被引：25

作者：

Cho, AY ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

D O I：

10.1016/S0022-0248(98)01265-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This is an extended abstract of a talk given at the International Conference on Molecular Beam Epitaxy in Cannes, France, August 31, 1998. It describes some critical turning points of the development of MBE from basic research to high volume production technology. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 7

页数：7