Modifications and characterization of a silicon-based microelectrode array

被引：23

作者：

Buss, G

Schöning, MJ

Lüth, H

Schultze, JW ^{[1
]}

机构：

[1] Univ Dusseldorf, Inst Phys Chem & Elektrochem, D-40225 Dusseldorf, Germany

[2] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

ELECTROCHIMICA ACTA | 1999年 / 44卷 / 21-22期

关键词：

microelectrode array; chemical analysis; semiconductor technology; corrosion stability; galvanic deposition;

D O I：

10.1016/S0013-4686(99)00097-3

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A silicon-based microelectrode array for a wide variety of applications has been developed, This microelectrode array represents a well-suited alternative to current methods of chemical analysis and is useful in order to study and optimize effects such as material corrosion, etching processes and different passivation layers. Microelectrodes with a high aspect ratio for space-resolved measurements and an integrated energy supply could be realized by galvanic deposition. The used passivation layers were characterized by scanning electron microscopy (SEM), optical microscopy and small area X-ray photoelectron spectroscopy (XPS). The electrodes have been investigated by SEM, cyclic voltammetry and laser profilometry. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：3899 / 3910

页数：12

共 36 条

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