ZnS:Mn thin-film electroluminescent devices prepared by metalorganic chemical vapor deposition

被引：19

作者：

Kina, H ^{[1
]}

Yamada, Y ^{[1
]}

Maruta, Y ^{[1
]}

Tamura, Y ^{[1
]}

机构：

[1] UNIV YAMANASHI,GRAD SCH ENGN,YAMANASHI,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 169卷 / 01期

关键词：

D O I：

10.1016/0022-0248(96)00321-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnS:Mn electroluminescent (EL) thin films of high quality have been grown by using MOCVD. Growth rates of the ZnS:Mn films are restricted by a supplied amount of metalorganic gas. The ZnS:Mn thin films grown at a substrate temperature of 200 degrees C are well oriented into a cubic (111) direction, have a large grain size and are low in lattice defects. Th ZnS:Mn thin film EL devices showed higher luminance of 420 cd/m(2) (L(60)) under 60 Hz and 30 mu s pulse voltage drive.

引用

页码：33 / 39

页数：7

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