Electroluminescence and photoluminescence of Ge+-implanted SiO2 films thermally grown on crystalline silicon

被引：33

作者：

Zhang, JY ^{[1
]}

Wu, XL ^{[1
]}

Bao, XM ^{[1
]}

机构：

[1] NANJING UNIV,DEPT PHYS,NANJING 210093,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 17期

关键词：

D O I：

10.1063/1.120102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescent devices have been fabricated based on Ge+-implanted SiO2 films thermally grown on crystalline silicon. Both room-temperature electroluminescence and photoluminescence spectra are found to have three luminescent bands peaked at 3.1, 2.1, and 1.6 eV. The electroluminescent devices have onsets for emission under forward bias of 5 V and under reverse bias of -13 V. Its emission is stable and reproducible. Spectral analyses suggest that the electroluminescent excitation of the 3.1 eV band may be related to the impact ionization by hot electrons, whereas that of the 2.1 and 1.6 eV bands to the radiative recombination of hole-electron pairs. (C) 1997 American Institute of Physics. [S0003-6951(97)03443-8].

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页码：2505 / 2507

页数：3

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