NOVEL-APPROACH FOR SYNTHESIZING GE FINE PARTICLES EMBEDDED IN GLASS BY ION-IMPLANTATION - FORMATION OF GE NANOCRYSTAL IN SIO2-GEO2 GLASSES BY PROTON IMPLANTATION

被引：20

作者：

HOSONO, H

MATSUNAMI, N

KUDO, A

OHTSUKA, T

机构：

[1] NAGOYA UNIV,SCH ENGN,CHIKUSA KU,NAGOYA,AICHI 46401,JAPAN

[2] NAGOYA INST TECHNOL,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanometer-sized crystalline Ge colloid particles have been formed by implantation of protons into substrate glasses having a composition of 1 GeO2-9SiO(2) to a fluence of 1X10(18) cm(-2) cm at an energy of 1.5 MeV at room temperature without post-thermal annealing. Intensities of the absorption band due to Ge particles reach a maximum at similar to 30 mu m from the surface and their depth profile is close to that of the electronic energy loss. No formation of Si particles was observed in SiO2 orSiO(2):GeO2 glasses implanted with protons at the same conditions and fluence.

引用

页码：1632 / 1634

页数：3

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