Epitaxial growth of electrodeposited cadmium selenide on (111) gallium arsenide

被引：4

作者：

Cachet, H ^{[1
]}

Cortes, R ^{[1
]}

Froment, M ^{[1
]}

Maurin, G ^{[1
]}

机构：

[1] Univ Paris 06, CNRS, Unite Propre 15, F-75252 Paris 05, France

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1999年 / 79卷 / 10期

关键词：

D O I：

10.1080/095008399176661

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial growth of CdSe has been achieved on (111) GaAs by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques.

引用

页码：837 / 840

页数：4

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