Heteroepitaxy of chemically deposited CdS on large lattice mismatched (111) GaP

被引：7

作者：

Lincot, D ^{[1
]}

Mokili, B ^{[1
]}

Cortes, R ^{[1
]}

Froment, M ^{[1
]}

机构：

[1] UNIV PARIS 06,CNRS 15,UNITE PROPRE,F-75252 PARIS 05,FRANCE

来源：

MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1996年 / 7卷 / 04期

关键词：

D O I：

10.1051/mmm:1996117

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Heteroepitaxial CdS films (60 nm) have been deposited at 85 degrees C on GaP from aqueous solutions of ammonia containing cadmium ions and thiourea precursors. Structural characterizations have been performed with RHEED, five circle XRD and TEM observations of cross sections. The large lattice mismatch results in the formation of a large density of stacking faults in the CdS leading to a polytype structure with an equal proportion of cubic and hexagonal modifications. Changes in the lattice parameter are observed in the CdS near the interface.

引用

页码：217 / 224

页数：8

共 25 条

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