Epitaxial growth of chemically deposited cubic cadmium sulphide films on (100) indium phosphide

被引：6

作者：

Cortes, R

Froment, M

Mokili, B

Lincot, D

机构：

[1] ECOLE NATL SUPER CHIM,CNRS,LAB ELECTROCHIM & CHIM ANALYT,F-75231 PARIS 05,FRANCE

[2] UNIV PARIS 06,CNRS 15,F-75252 PARIS 05,FRANCE

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1996年 / 73卷 / 04期

关键词：

D O I：

10.1080/095008396180858

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial growth of CdS films has been achieved on InP (100) by chemical deposition from aqueous solution. The structure of the film corresponds to the metastable cubic modification of CdS. The film quality has been investigated by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. The reasons for the preferential growth of the cubic structure are discussed.

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页码：209 / 213

页数：5

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