INDIUM-PHOSPHIDE PASSIVATION USING THIN-LAYERS OF CADMIUM-SULFIDE

被引：37

作者：

VACCARO, K

DAUPLAISE, HM

DAVIS, A

SPAZIANI, SM

LORENZO, JP

机构：

[1] Optical Components Branch, Rome Laboratory, Hanscom Air Force Base

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.115177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of the silicon dioxide/n-type (100) InP interface were significantly improved by thin interlayers of chemical bath deposited CdS. The CdS layer and CdS/lnP interface were investigated with x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). XPS data showed reduction of native oxides and the prevention of subsequent substrate oxide growth following CdS layer deposition. PL spectra, measured between 1.0 and 1.3 mu m, indicate a reduction in phosphorus vacancies. Metal-insulator-semiconductor (MIS) capacitors fabricated with CdS-treated InP substrates displayed interface-state densities below 1X10(11) eV(-1) cm(-2) when determined from the difference between the high- and low-frequency capacitance data.

引用

页码：527 / 529

页数：3

共 16 条

[1] LOW-TEMPERATURE PYROLYTIC DEPOSITION OF HIGH-QUALITY SIO2 [J].