共 28 条
[1]
AKAZAWA M, 1988, 1988 FALL M JAP SOC
[2]
AKAZAWA M, 1988, 1989 C SOL STAT DEV
[5]
VARIATION OF N-GAAS (100) INTERFACE FERMI LEVEL BY GE AND SI OVERLAYERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1015-1019
[6]
HYBRID ORBITAL ENERGY FOR HETEROJUNCTION BAND LINEUP
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1986, 25 (04)
:L265-L268
[7]
ELECTRONIC AND MICROSTRUCTURAL PROPERTIES OF DISORDER-INDUCED GAP STATES AT COMPOUND SEMICONDUCTOR-INSULATOR INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1097-1107
[8]
UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
:1130-1138
[9]
GAAS AND IN0.53GA0.47AS MIS STRUCTURES HAVING AN ULTRATHIN PSEUDOMORPHIC INTERFACE CONTROL LAYER OF SI PREPARED BY MBE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1988, 27 (12)
:L2265-L2267