CONTROL OF COMPOUND SEMICONDUCTOR INSULATOR INTERFACES BY AN ULTRATHIN MOLECULAR-BEAM EPITAXY SI LAYER

被引:112
作者
HASEGAWA, H
AKAZAWA, M
ISHII, H
MATSUZAKI, K
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期
关键词
D O I
10.1116/1.584616
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:870 / 878
页数:9
相关论文
共 28 条
[1]  
AKAZAWA M, 1988, 1988 FALL M JAP SOC
[2]  
AKAZAWA M, 1988, 1989 C SOL STAT DEV
[3]   GAAS MIS STRUCTURES WITH SIO2 USING A THIN SILICON INTERLAYER [J].
FOUNTAIN, GG ;
HATTANGADY, SV ;
VITKAVAGE, DJ ;
RUDDER, RA ;
MARKUNAS, RJ .
ELECTRONICS LETTERS, 1988, 24 (18) :1134-1135
[4]   CHARACTERISTICS OF THE LOW-TEMPERATURE-DEPOSITED SIO2-GA0.47IN0.53AS METAL-INSULATOR SEMICONDUCTOR INTERFACE [J].
GARDNER, PD ;
NARAYAN, SY ;
YUN, YH .
THIN SOLID FILMS, 1984, 117 (03) :173-190
[5]   VARIATION OF N-GAAS (100) INTERFACE FERMI LEVEL BY GE AND SI OVERLAYERS [J].
GRANT, RW ;
WALDROP, JR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1015-1019
[6]   HYBRID ORBITAL ENERGY FOR HETEROJUNCTION BAND LINEUP [J].
HASEGAWA, H ;
OHNO, H ;
SAWADA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L265-L268
[7]   ELECTRONIC AND MICROSTRUCTURAL PROPERTIES OF DISORDER-INDUCED GAP STATES AT COMPOUND SEMICONDUCTOR-INSULATOR INTERFACES [J].
HASEGAWA, H ;
HE, L ;
OHNO, H ;
SAWADA, T ;
HAGA, T ;
ABE, Y ;
TAKAHASHI, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1097-1107
[8]   UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J].
HASEGAWA, H ;
OHNO, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1130-1138
[9]   GAAS AND IN0.53GA0.47AS MIS STRUCTURES HAVING AN ULTRATHIN PSEUDOMORPHIC INTERFACE CONTROL LAYER OF SI PREPARED BY MBE [J].
HASEGAWA, H ;
AKAZAWA, M ;
MATSUZAKI, KI ;
ISHII, H ;
OHNO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2265-L2267
[10]   ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J].
HASEGAWA, H ;
SAWADA, T .
THIN SOLID FILMS, 1983, 103 (1-2) :119-140