VARIATION OF N-GAAS (100) INTERFACE FERMI LEVEL BY GE AND SI OVERLAYERS

被引：53

作者：

GRANT, RW

WALDROP, JR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1015 / 1019

页数：5

共 31 条

[1] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].

BRASLAU, N ;

GUNN, JB ;

STAPLES, JL .

SOLID-STATE ELECTRONICS, 1967, 10 (05) :381-+

[2] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[3] CONTACT AND METALLIZATION PROBLEMS IN GAAS INTEGRATED-CIRCUITS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :3085-3090

[4] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J].

BRUGGER, H ;

SCHAFFLER, F ;

ABSTREITER, G .

PHYSICAL REVIEW LETTERS, 1984, 52 (02) :141-144

[5] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[6] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J].

CHIARADIA, P ;

KATNANI, AD ;

SANG, HW ;

BAUER, RS .

PHYSICAL REVIEW LETTERS, 1984, 52 (14) :1246-1249

[7] ELECTRICAL CHARACTERISTICS OF EPITAXIAL GERMANIUM FILMS VACUUM DEPOSITED ON SEMI-INSULATING GAAS UP TO THICKNESS OF 106 A - (DEPOSITION AT 475 AND 500 DEGREEES C RELATION OF CARRIER CONCENTRATION TO THICKNESS E) [J].

DAVEY, JE .

APPLIED PHYSICS LETTERS, 1966, 8 (07) :164-&

[8] CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION [J].

GRANT, RW ;

WALDROP, JR ;

KOWALCZYK, SP ;

KRAUT, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :477-480

[9] IRRELEVANCE OF INTERFACE DEFECTS TO HETEROJUNCTION BAND OFFSETS [J].

KATNANI, AD ;

CHIARADIA, P ;

SANG, HW ;

BAUER, RS .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (01) :25-32

[10] BAND DISCONTINUITIES AND INTERFACE FERMI-LEVEL POSITIONS IN GE-GAAS(110) HETEROJUNCTIONS [J].

KOWALCZYK, SP ;

GRANT, RW ;

WALDROP, JR ;

KRAUT, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :684-686

← 1 2 3 4 →