IRRELEVANCE OF INTERFACE DEFECTS TO HETEROJUNCTION BAND OFFSETS

被引：8

作者：

KATNANI, AD

CHIARADIA, P

SANG, HW

BAUER, RS

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 01期

关键词：

D O I：

10.1007/BF02657917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：25 / 32

页数：8

共 23 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343

[3] SURFACE PHASES OF GAAS(100) AND ALAS(100) [J].

BACHRACH, RZ ;

BAUER, RS ;

CHIARADIA, P ;

HANSSON, GV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :797-801

[4] INTERFACES OF SEMICONDUCTING MOLECULAR-BEAM EPITAXIAL-FILMS [J].

BAUER, RS .

THIN SOLID FILMS, 1982, 89 (04) :419-432

[5] INEQUALITY OF SEMICONDUCTOR HETEROJUNCTION CONDUCTION-BAND-EDGE DISCONTINUITY AND ELECTRON-AFFINITY DIFFERENCE [J].

BAUER, RS ;

ZURCHER, P ;

SANG, HW .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :663-665

[6]

CHIARADIA P, 1984, PHYS REV LETT, V52, P1233

[7] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].

FRENSLEY, WR ;

KROEMER, H .

PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652

[8] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021

[9] EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIES [J].

KATNANI, AD ;

MARGARITONDO, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2522-2525

[10] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J].

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW B, 1983, 28 (04) :1944-1956

← 1 2 3 →