GAAS MIS STRUCTURES WITH SIO2 USING A THIN SILICON INTERLAYER

[1] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3484 - 3491

[2] LOW INTERFACE STATE DENSITY SIO2 DEPOSITED AT 300-DEGREES-C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION ON RECONSTRUCTED SI SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4744 - 4746

[3] ELECTRICAL AND MICROSTRUCTURAL CHARACTERIZATION OF AN ULTRATHIN SILICON INTERLAYER USED IN A SILICON DIOXIDE GERMANIUM-BASED MIS STRUCTURE [J]. ELECTRONICS LETTERS, 1988, 24 (16) : 1010 - 1011

[4] PASSIVATION AND INTERFACE STATE STUDIES ON N-GAAS [J]. APPLIED SURFACE SCIENCE, 1981, 8 (03) : 266 - 277

[5] HATTANGADY SV, 1987, MATERIALS RES SOC S, V102, P319

[6] PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 215 - 223

[7] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1402 - 1407

[8] STUDY OF N-GAAS MOS DIODES WITH SPIN-ON SIO2 LAYER [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02): : K279 - K282

[9] EFFECT OF NATIVE OXIDE ON INTERFACE PROPERTY OF GAAS MIS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 761 - 762

[10] SELF-TERMINATING THERMAL-OXIDATION OF AIAS EPILAYERS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 426 - 429

[1] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3484 - 3491

[2] LOW INTERFACE STATE DENSITY SIO2 DEPOSITED AT 300-DEGREES-C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION ON RECONSTRUCTED SI SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4744 - 4746

[3] ELECTRICAL AND MICROSTRUCTURAL CHARACTERIZATION OF AN ULTRATHIN SILICON INTERLAYER USED IN A SILICON DIOXIDE GERMANIUM-BASED MIS STRUCTURE [J]. ELECTRONICS LETTERS, 1988, 24 (16) : 1010 - 1011

[4] PASSIVATION AND INTERFACE STATE STUDIES ON N-GAAS [J]. APPLIED SURFACE SCIENCE, 1981, 8 (03) : 266 - 277

[5] HATTANGADY SV, 1987, MATERIALS RES SOC S, V102, P319

[6] PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 215 - 223

[7] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1402 - 1407

[8] STUDY OF N-GAAS MOS DIODES WITH SPIN-ON SIO2 LAYER [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02): : K279 - K282

[9] EFFECT OF NATIVE OXIDE ON INTERFACE PROPERTY OF GAAS MIS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 761 - 762

[10] SELF-TERMINATING THERMAL-OXIDATION OF AIAS EPILAYERS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 426 - 429