STUDY OF N-GAAS MOS DIODES WITH SPIN-ON SIO2 LAYER

被引：3

作者：

SENGUPTA, D ^{[1
]}

KUMAR, V ^{[1
]}

机构：

[1] VISVA BHARATI UNIV,DEPT PHYS,SANTINIKETAN 731235,W BENGAL,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 73卷 / 02期

关键词：

D O I：

10.1002/pssa.2210730272

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：K279 / K282

页数：4

相关论文

共 14 条

[1] ANODIC-OXIDATION OF GALLIUM-ARSENIDE
ARORA, BM
BIDNURKAR, MG
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (07) : 657 - 658
[2] CHAKRABARTI UK, 1976, J INDIAN I SCI, V58, P28
[3] CHAM H, 1977, THIN SOLID FILMS, V41, P43
[4] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER
HASEGAWA, H
HARTNAGEL, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723
[5] ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT
HASEGAWA, H
SAWADA, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1055 - 1061
[6] KASSING R, UNPUB
[7] TEMPERATURE AND ENERGY DEPENDENCES OF CAPTURE CROSS-SECTIONS AT SURFACE-STATES IN SI METAL-OXIDE-SEMICONDUCTOR DIODES MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY
KATSUBE, T
KAKIMOTO, K
IKOMA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3504 - 3508
[8] LEDEBO LA, 1976, THESIS LUND U SWEDEN
[9] NARRATIL K, 1968, CZECH J PHYS B, V18, P226
[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +