TEMPERATURE AND ENERGY DEPENDENCES OF CAPTURE CROSS-SECTIONS AT SURFACE-STATES IN SI METAL-OXIDE-SEMICONDUCTOR DIODES MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY

被引:71
作者
KATSUBE, T [1 ]
KAKIMOTO, K [1 ]
IKOMA, T [1 ]
机构
[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN
关键词
D O I
10.1063/1.329128
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:3504 / 3508
页数:5
相关论文
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