ION-ELECTRON (CONFIGURATIONAL) INTERFACE STATES IN MOS STRUCTURES

被引：14

作者：

KAMIENIECKI, E ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 10期

关键词：

D O I：

10.1063/1.90944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new model of the semiconductor-insulator interface states is proposed. Transitions between free and bound states of a system consisting of a charged center in the insulator and an electron in the semiconductor are considered in the model. By assuming that the charged centers are located at different distances from the interface, the occurrence of a continuous distribution of Si/SiO2 interface states over the band gap of the semiconductor and the sharp decrease of the electron capture cross section as the binding energy of the states tends towards the conduction band edge are explained.

引用

页码：807 / 809

页数：3

共 14 条

[1] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].