SELF-TERMINATING THERMAL-OXIDATION OF AIAS EPILAYERS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY

被引：45

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 05期

关键词：

D O I：

10.1063/1.90410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：426 / 429

页数：4

共 9 条

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[2] USE OF OXYGEN-DOPED ALXGA1-XAS FOR INSULATING LAYER IN MIS STRUCTURES [J].

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APPLIED PHYSICS LETTERS, 1978, 32 (10) :678-679

[3] PLASMA OXIDATION OF GAAS [J].

CHANG, RPH ;

SINHA, AK .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :56-58

[4]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :466-468

[6] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J].

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APPLIED PHYSICS LETTERS, 1967, 10 (03) :97-&

[7] DEPLETION-MODE GAAS MOS FET [J].

LILE, DL ;

CLAWSON, AR ;

COLLINS, DA .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :207-208

[8] THERMAL OXIDATION OF GAAS [J].

MURARKA, SP .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :180-181

[9]

PRATT IH, 1969, SOLID STATE TECHNOL, V12, P49

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