ELECTRICAL AND MICROSTRUCTURAL CHARACTERIZATION OF AN ULTRATHIN SILICON INTERLAYER USED IN A SILICON DIOXIDE GERMANIUM-BASED MIS STRUCTURE

被引：9

作者：

FOUNTAIN, GG ^{[1
]}

RUDDER, RA ^{[1
]}

HATTANGADY, SV ^{[1
]}

VITKAVAGE, DJ ^{[1
]}

MARKUNAS, RJ ^{[1
]}

POSTHILL, JB ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 16期

关键词：

D O I：

10.1049/el:19880687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1010 / 1011

页数：2

共 9 条

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CHANG, RPH ;

FIORY, AT .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1534-1536

[2] LOW INTERFACE STATE DENSITY SIO2 DEPOSITED AT 300-DEGREES-C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION ON RECONSTRUCTED SI SURFACES [J].

FOUNTAIN, GG ;

RUDDER, RA ;

HATTANGADY, SV ;

MARKUNAS, RJ ;

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JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4744-4746

[3]

HATTANGADY SV, 1987, MATERIALS RES SOC S, V102, P319

[4] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

LUCOVSKY, G ;

RICHARD, PD ;

TSU, DV ;

LIN, SY ;

MARKUNAS, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :681-688

[5] REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION OF EPITAXIAL GE FILMS [J].

RUDDER, RA ;

FOUNTAIN, GG ;

MARKUNAS, RJ .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3519-3522

[6] DOMINANT SURFACE ELECTRONIC PROPERTIES OF SIO2-PASSIVATED GE SURFACES AS A FUNCTION OF VARIOUS ANNEALING TREATMENTS [J].

SEDGWICK, TO .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5066-+

[7]

SPENCE JCH, 1981, EXPT HIGH RESOLUTION

[8]

WANG KL, 1976, J ELECTROCHEM SOC, V123, P1392, DOI 10.1149/1.2133083

[9]

ZABOTIN VM, 1977, MIKROELEKTRONIKA, P359

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