共 20 条
[1]
NONSTOICHIOMETRIC GERMANIUM NITRIDE - A NEW INSULATING MATERIAL FOR MIS MICROELECTRONICS .2. COMPOSITION, PROPERTIES, AND THE INTERFACE WITH A SEMICONDUCTOR
[J].
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
1983, 78 (02)
:391-400
[2]
GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1984, 2 (02)
:436-440
[3]
GERMANIUM INSULATED-GATE FIELD-EFFECT TRANSISTOR (FET)
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
1965, 53 (03)
:316-&
[4]
PLASMA ENHANCED BEAM DEPOSITION OF THIN-FILMS AT LOW-TEMPERATURES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (04)
:935-942
[6]
Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
[9]
KAWAJI S, 1960, J PHYS SOC JPN, V15, P95