GERMANIUM INSULATED-GATE FIELD-EFFECT TRANSISTOR (FET)

被引：11

作者：

CHANG, LL

YU, HN

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 03期

关键词：

D O I：

10.1109/PROC.1965.3715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：316 / &

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[1] EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM
CHEROFF, G
FANG, F
HOCHBERG, F
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 416 - &
[2] EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN INVERSION LAYER ON P-TYPE SILICON ( TRANSVERSE ELECTRIC FIELD EFFECT ON CARRIER MOBILITY E/T )
FANG, F
TRIEBWASSER, S
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (08) : 145 - &
[3] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
HEIMAN, FP
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &
[4] KAHNG D, 1960, JUN SOL STAT DEV RES
[5] MODULATION OF CONDUCTANCE OF THIN FILMS OF SEMI-CONDUCTORS BY SURFACE CHARGES
SHOCKLEY, W
PEARSON, GL
[J]. PHYSICAL REVIEW, 1948, 74 (02): : 232 - 233