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INTERFACE PROPERTIES OF AL2O3-GE STRUCTURE AND CHARACTERISTICS OF AL2O3-GE MOS TRANSISTORS

被引：29
作者：
IWAUCHI, S
TANAKA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 02期
关键词：
D O I：
10.1143/JJAP.10.260
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：260 / +
页数：1
相关论文
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