REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION OF EPITAXIAL GE FILMS

被引：64

作者：

RUDDER, RA

FOUNTAIN, GG

MARKUNAS, RJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.337604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3519 / 3522

页数：4

相关论文

共 16 条

[1] STRUCTURAL STUDIES OF GE-GAAS INTERFACES
CHANG, CA
KUAN, TS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 315 - 319
[2] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT
DONAHUE, TJ
REIF, R
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765
[3] R F PLASMA DEPOSITION OF SILICON-NITRIDE LAYERS
HELIX, MJ
VAIDYANATHAN, KV
STREETMAN, BG
DIETRICH, HB
CHATTERJEE, PK
[J]. THIN SOLID FILMS, 1978, 55 (01) : 143 - 148
[4] SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY
HENDERSON, RC
HELM, RF
[J]. SURFACE SCIENCE, 1972, 30 (02) : 310 - +
[5] EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE
KUECH, TF
MAENPAA, M
LAU, SS
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 245 - 247
[6] INDIRECT PLASMA DEPOSITION OF SILICON DIOXIDE
MEINERS, LG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 655 - 658
[7] SOME OBSERVATIONS ON GE-GAAS(001) AND GAAS-GE(001) INTERFACES AND FILMS
NEAVE, JH
LARSEN, PK
JOYCE, BA
GOWERS, JP
VANDERVEEN, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 668 - 674
[8] SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS
PALMSTROM, CJ
GALVIN, GJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 815 - 817
[9] REMOTE PLASMA ENHANCED CVD DEPOSITION OF SILICON-NITRIDE AND OXIDE FOR GATE INSULATORS IN (INDIUM, GA)AS FET DEVICES
RICHARD, PD
MARKUNAS, RJ
LUCOVSKY, G
FOUNTAIN, GG
MANSOUR, AN
TSU, DV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 867 - 872
[10] RUSSELL GJ, 1978, SURF SCI, V19, P217