STRUCTURAL STUDIES OF GE-GAAS INTERFACES

被引：25

作者：

CHANG, CA

KUAN, TS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：315 / 319

页数：5

共 29 条

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