SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS

被引：6

作者：

PALMSTROM, CJ

GALVIN, GJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.95993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：815 / 817

页数：3

共 17 条

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[9]

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