AL-SI CONTACTS FORMED BY ION IRRADIATION AND POST-ANNEALING

被引：13

作者：

HUNG, LS ^{[1
]}

MAYER, JW ^{[1
]}

ZHANG, M ^{[1
]}

WOLF, ED ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.94249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1123 / 1125

页数：3

共 15 条

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BERGER, HH .

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[2] THERMALLY-INDUCED CHANGES IN BARRIER HEIGHTS OF ALUMINUM CONTACTS TO PARA-TYPE AND NORMAL-TYPE SILICON [J].

CARD, HC .

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[3] ALUMINUM-ALLOY METALLIZATION FOR INTEGRATED-CIRCUITS [J].

GHATE, PB .

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[4] METALLIZATION IN MICROELECTRONICS [J].

GHATE, PB ;

BLAIR, JC ;

FULLER, CR .

THIN SOLID FILMS, 1977, 45 (01) :69-84

[5]

KENNEDY EF, 1976, ION IMPLANTATION SEM, P511

[6]

LAU SS, 1982, APPL PHYS LETT, V41, P1

[7] EVOLUTION AND CURRENT STATUS OF ALUMINUM METALLIZATION [J].

LEARN, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :894-906

[8] EFFECTS OF AL FILMS ON ION-IMPLANTED SI [J].

LEE, DH ;

HART, RR ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1972, 20 (02) :73-&

[9]

PRAMANIK D, 1983, SOLID STATE TECHNOL, V26, P131

[10] AGING EFFECTS IN SI-DOPED AL SCHOTTKY-BARRIER DIODES [J].

REITH, TM .

APPLIED PHYSICS LETTERS, 1976, 28 (03) :152-154

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