AGING EFFECTS IN SI-DOPED AL SCHOTTKY-BARRIER DIODES

被引：12

作者：

REITH, TM ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533

来源：

关键词：

D O I：

10.1063/1.88677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：152 / 154

页数：3

共 10 条

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[2] CARD HC, 1974, METAL SEMICONDUCTOR, P129
[3] GROVE AS, 1967, PHYS TECHNOL S, P38
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[5] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .1.
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1730 - 1739
[6] DIFFUSION ALONG SMALL-ANGLE GRAIN BOUNDARIES IN SILICON
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[J]. PHYSICAL REVIEW, 1961, 123 (04): : 1245 - &
[7] REITH TM, 1974, APPL PHYS LETT, V25, P526
[8] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION
SANKUR, H
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DEVANEY, J
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (02) : 64 - 66
[9] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .2.
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ARNAL, HJ
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1740 - 1745
[10] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
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