ION-BOMBARDED-ASSISTED REACTION IN THE GE-AU-GAAS SYSTEM

被引：5

作者：

INADA, T ^{[1
]}

KAKINUMA, H ^{[1
]}

SHIROTA, A ^{[1
]}

MATSUMOTO, J ^{[1
]}

ISHIKIRIYAMA, M ^{[1
]}

FUNAKI, Y ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 184,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90436-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：576 / 580

页数：5

共 5 条

[1] THE EFFECT OF PHOSPHORUS ION-IMPLANTATION ON MOLYBDENUM-SILICON CONTACTS [J].

CHIANG, SW ;

CHOW, TP ;

REIHL, RF ;

WANG, KL .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4027-4032

[2] COMPARISON OF ANNEALING AND ION-IMPLANTATION EFFECTS DURING SOLID-STATE DISILICIDE FORMATION [J].

DHEURLE, FM ;

TSAI, MY ;

PETERSSON, CS ;

STRITZKER, B .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3067-3069

[3] RUTHERFORD BACKSCATTERING ANALYSIS OF SILICIDE FORMATION IN MO-SI STRUCTURES BY ION-IMPLANTATION [J].

INADA, T ;

KISHI, K ;

MIYAGI, S ;

KAKINUMA, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :567-572

[4]

KAKINUMA H, 1984, UNPUB SPR M JAP APPL

[5] ION-BEAM-INDUCED REACTIONS IN METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STRUCTURES [J].

MAYER, JW ;

TSAUR, BY ;

LAU, SS ;

HUNG, LS .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :1-13

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