RUTHERFORD BACKSCATTERING ANALYSIS OF SILICIDE FORMATION IN MO-SI STRUCTURES BY ION-IMPLANTATION

被引：7

作者：

INADA, T

KISHI, K

MIYAGI, S

KAKINUMA, H

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 218卷 / 1-3期

关键词：

D O I：

10.1016/0167-5087(83)91044-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：567 / 572

页数：6

共 10 条

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4027-4032

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APPLIED PHYSICS LETTERS, 1974, 25 (06) :337-339

[5] LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING PD2SI FORMATION [J].

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[6]

SMITH B, 1977, ION IMPLANTATION RAN

[7] REFRACTORY-METAL SILICIDE FORMATION INDUCED BY AS+ IMPLANTATION [J].

TSAI, MY ;

PETERSSON, CS ;

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MANISCALCO, V .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :295-298

[8]

Tu K. N., 1978, THIN FILMS INTERDIFF

[9] INTERFACE MODIFICATION OF REFRACTORY METAL-SILICON STRUCTURES BY ION-IMPLANTATION [J].

WANG, KL ;

BACON, F ;

REIHL, RF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1909-1912

[10] REDISTRIBUTION OF IMPLANTED DOPANTS AFTER METAL-SILICIDE FORMATION [J].

WITTMER, M ;

SEIDEL, TE .

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