RUTHERFORD BACKSCATTERING ANALYSIS OF SILICIDE FORMATION IN MO-SI STRUCTURES BY ION-IMPLANTATION

被引:7
作者
INADA, T
KISHI, K
MIYAGI, S
KAKINUMA, H
机构
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 218卷 / 1-3期
关键词
D O I
10.1016/0167-5087(83)91044-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:567 / 572
页数:6
相关论文
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