INTERFACE MODIFICATION OF REFRACTORY METAL-SILICON STRUCTURES BY ION-IMPLANTATION

被引：10

作者：

WANG, KL ^{[1
]}

BACON, F ^{[1
]}

REIHL, RF ^{[1
]}

机构：

[1] GE,RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.570326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1909 / 1912

页数：4

共 14 条

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[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293
[3] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93
[4] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL
MOCHIZUKI, T
SHIBATA, K
INOUE, T
OHUCHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42
[5] PALMBERG PW, 1976, HDB AUGER ELECTRON S
[6] PHILLIPS JC, 1978, P S THIN FILM PHENOM, V78, P3
[7] Poate J M, 1978, THIN FILMS INTERDIFF
[8] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE
ROTH, JA
CROWELL, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1317 - 1324
[9] ROTH JA, 1978, P ELECTROCHEM SOC, V78, P29
[10] STORMS HA, 1979, AUG P SIMS C STANF U