REFRACTORY-METAL SILICIDE FORMATION INDUCED BY AS+ IMPLANTATION

[1] SILICIDE FORMATION BY HIGH-DOSE SI+-ION IMPLANTATION OF PD [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6321 - 6327

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[3] DHEURLE FM, UNPUBLISHED

[4] NIOBIUM SILICIDE FORMATION INDUCED BY AR-ION BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 222 - 224

[5] FABRICATION AND THERMAL-STABILITY OF W-SI OHMIC CONTACTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 262 - 269

[6] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4366 - 4369

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] PETERSSON CS, 1980, THIN FILM INTERFACES

[9] KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON [J]. APPLIED PHYSICS LETTERS, 1974, 24 (08) : 391 - 393

[10] SCHWARZKOPF P, 1953, REFRACTORY HARD META, P239

[1] SILICIDE FORMATION BY HIGH-DOSE SI+-ION IMPLANTATION OF PD [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6321 - 6327

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[3] DHEURLE FM, UNPUBLISHED

[4] NIOBIUM SILICIDE FORMATION INDUCED BY AR-ION BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 222 - 224

[5] FABRICATION AND THERMAL-STABILITY OF W-SI OHMIC CONTACTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 262 - 269

[6] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4366 - 4369

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] PETERSSON CS, 1980, THIN FILM INTERFACES

[9] KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON [J]. APPLIED PHYSICS LETTERS, 1974, 24 (08) : 391 - 393

[10] SCHWARZKOPF P, 1953, REFRACTORY HARD META, P239