MIGRATION OF MO ATOMS ACROSS MO-SI INTERFACE INDUCED BY AR+ ION-BOMBARDMENT

被引：19

作者：

NISHI, H ^{[1
]}

SAKURAI, T ^{[1
]}

AKAMATSU, T ^{[1
]}

FURUYA, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAMIKODANAKA,KOWASAKI,JAPAN

来源：

关键词：

D O I：

10.1063/1.1655498

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：337 / 339

页数：3

共 7 条

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[2] ALLOYING OF THIN PALLADIUM FILMS WITH SINGLE-CRYSTAL AND AMORPHOUS SILICON
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MARSH, OJ
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : 645 - 651
[3] EFFECTS OF AL FILMS ON ION-IMPLANTED SI
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HART, RR
MARSH, OJ
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 73 - &
[4] ENHANCED DIFFUSION IN SI AND GE BY LIGHT ION IMPLANTATION
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GIBBONS, JF
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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3468 - &
[5] Nelson R. S., 1969, Radiation Effects, V2, P47, DOI 10.1080/00337576908235579
[6] PARKINS JG, 1972, J NONCRYST SOLIDS, V3, P349
[7] VANDERWEG WF, 1973, INT C APPLICATION IO