EPITAXIAL-GROWTH OF AMORPHOUS-GE FILMS DEPOSITED ON SINGLE-CRYSTAL GE

被引：12

作者：

GRIMALDI, MG

MAENPAA, M

PAINE, BM

NICOLET, MA

LAU, SS

TSENG, WF

机构：

[1] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093

[2] USN,RES LAB,WASHINGTON,DC 20375

[3] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.329763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1351 / 1355

页数：5

共 9 条

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POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :59-61

[2] EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON [J].

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[3]

HESS LD, 1980, P S LASER ELECTRON B, P562

[4] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI [J].

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LAU, SS ;

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ULLRICH, BM ;

BAKER, JE ;

WILLIAMS, P ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :909-911

[5] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS [J].

ROTH, JA ;

ANDERSON, CL .

APPLIED PHYSICS LETTERS, 1977, 31 (10) :689-691

[6] ION-BEAM-INDUCED MODIFICATION OF SILICIDE FORMATION IN RARE-EARTH-METALS - ER-SI AND TB-SI SYSTEMS [J].

TSAUR, BY ;

HUNG, LS .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :922-924

[7] SOLID-STATE EPITAXIAL-GROWTH OF DEPOSITED SI FILMS [J].

VONALLMEN, M ;

LAU, SS ;

MAYER, JW ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :280-282

[8]

VONALLMEN M, 1980, P S THIN FILM INTERF, V80, P195

[9] CRYSTALLIZATION IN AMORPHOUS-SILICON [J].

ZELLAMA, K ;

GERMAIN, P ;

SQUELARD, S ;

BOURGOIN, JC ;

THOMAS, PA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6995-7000

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