EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI

被引：52

作者：

HUNG, LS

LAU, SS

VONALLMEN, M

MAYER, JW

ULLRICH, BM

BAKER, JE

WILLIAMS, P

TSENG, WF

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV ILLINOIS,URBANA,IL 61801

[3] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 10期

关键词：

D O I：

10.1063/1.91855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：909 / 911

页数：3

共 12 条

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :59-61

[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[3] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[4] EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON [J].

FOTI, G ;

BEAN, JC ;

POATE, JM ;

MAGEE, CW .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :840-842

[5] OPTICAL EVIDENCE FOR A NETWORK OF CRACKLIKE VOIDS IN AMORPHOUS GERMANIUM [J].

GALEENER, FL .

PHYSICAL REVIEW LETTERS, 1971, 27 (25) :1716-&

[6]

HESS LD, 1980, LASER ELECTRON BEAM, P562

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[8]

KENNEDY EF, 1977, ION IMPLANTATION SEM, P511

[9] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS [J].

ROTH, JA ;

ANDERSON, CL .

APPLIED PHYSICS LETTERS, 1977, 31 (10) :689-691

[10] SOLID-STATE EPITAXIAL-GROWTH OF DEPOSITED SI FILMS [J].

VONALLMEN, M ;

LAU, SS ;

MAYER, JW ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :280-282

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