ENHANCEMENT-MODE INP MISFETS WITH SULFIDE PASSIVATION AND PHOTO-CVD GROWN P3N5 GATE INSULATORS

High performance enhancement mode InP MISFET's have been successfully fabricated by using the sulfide passivation for lower interface states and with photo-CVD grown P3N5 film used as gate insulator. The MISFET's thus fabricated exhibited excellent pinch-off behavior with essentially no hysteresis. Furthermore the device showed a superior stability of drain current. Specifically under the gate bias of 2 V for 10(4) seconds the room temperature drain current was shown to reduce from the initial value merely by 2.9% at the drain voltage of 4 V. The effective electron mobility and extrinsic transconductance are found to be about 2300 cm2/V.s and 2.7 mS/mm, respectively. The capacitance-voltage characteristics of the sulfide passivated InP MIS diodes show little hysteresis and the minimum density of interface trap states as low as 2.6 x 10(10)/cm2 . eV has been attained.