SULFIDE TREATED GAAS MISFETS WITH GATE INSULATOR OF PHOTO-CVD GROWN P3N5 FILM

被引：27

作者：

JEONG, YH

CHOI, KH

JO, SK

机构：

[1] Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, Pohang, Kyung pook, 790–330

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 07期

关键词：

D O I：

10.1109/55.294086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sulfide passivated GaAs MISFET's with the gate insulator of photo-CVD grown P3N5, films have been successfully fabricated. The device shows the drain current instability less than 22% for the period of 1.0 s approximately 1.0 X 10(4) s, due to excellent properties of sulfide treated P3N5/GaAs interrace. The effective electron mobility and extrinsic transconductance of the device are about 1300 cm2/V . sec and 133 mS, respectively, at room temperature. To estimate the effects of sulfide treatment on P3N5/GaAs interfacial properties, GaAs-MIS diodes are also fabricated.

引用

页码：251 / 253

页数：3

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