APPLICATION OF ANODIZATION IN OXYGEN PLASMA TO FABRICATION OF GAAS IGFETS

被引：8

作者：

SUGANO, T ^{[1
]}

KOSHIGA, F ^{[1
]}

YAMASAKI, K ^{[1
]}

TAKAHASHI, S ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 02期

关键词：

D O I：

10.1109/T-ED.1980.19882

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：449 / 455

页数：7

共 11 条

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CHANG, RPH ;

SINHA, AK .

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[2] DC PLASMA ANODIZATION OF GAAS [J].

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ELECTRONICS LETTERS, 1977, 13 (03) :73-74

[6] ANODIC-OXIDATION OF GAAS IN AN OXYGEN PLASMA GENERATED BY A DC ELECTRICAL-DISCHARGE [J].

KOSHIGA, F ;

SUGANO, T .

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[7] EFFECT OF SURFACE-STATES ON CHARACTERISTICS OF MIS FIELD-EFFECT TRANSISTORS [J].

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[8] DEPLETION-MODE GAAS MOS FET [J].

LILE, DL ;

CLAWSON, AR ;

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APPLIED PHYSICS LETTERS, 1976, 29 (03) :207-208

[9] GAAS MICROWAVE MOSFETS [J].

MIMURA, T ;

ODANI, K ;

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NAKAYAMA, Y ;

FUKUTA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :573-579

[10] HALF-MICRON GATE GAAS FET FABRICATED BY CHEMICAL DRY ETCHING [J].

TAKAHASHI, S ;

MURAI, F ;

KURONO, H ;

HIRAO, M ;

KODERA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :115-118

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