EFFECT OF SURFACE-STATES ON CHARACTERISTICS OF MIS FIELD-EFFECT TRANSISTORS

被引：28

作者：

LILE, DL

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 10期

关键词：

D O I：

10.1016/0038-1101(78)90366-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1199 / &

共 14 条

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[2]

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LILE, DL ;

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[5]

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[8] NEW MOBILITY-FIELD EXPRESSION FOR CALCULATION OF MOSFET CHARACTERISTICS [J].

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SOLID-STATE ELECTRONICS, 1976, 19 (07) :656-657

[9] ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION [J].

SAWADA, T ;

HASEGAWA, H .

ELECTRONICS LETTERS, 1976, 12 (18) :471-472

[10] INFLUENCE OF INTERFACE STATES ON DYNAMIC TRANSCONDUCTANCE OF MIS-FETS [J].

SCHRADER, L .

SOLID-STATE ELECTRONICS, 1977, 20 (08) :671-674

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