NEW MOBILITY-FIELD EXPRESSION FOR CALCULATION OF MOSFET CHARACTERISTICS

被引:5
作者
ROYCHOUDHURY, D [1 ]
BASU, PK [1 ]
机构
[1] CTR ADV STUDY RADIO PHYS & ELECTR,CALCUTTA 700009,INDIA
关键词
D O I
10.1016/0038-1101(76)90067-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:656 / 657
页数:2
相关论文
共 4 条
[1]   2-DIMENSIONAL NUMERICAL FET MODEL FOR DC, AC, AND LARGE-SIGNAL ANALYSIS [J].
REISER, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) :35-45
[2]   DRIFT-VELOCITY SATURATION OF HOLES IN SI INVERSION LAYERS [J].
SATO, T ;
TAKEISHI, Y ;
TANGO, H ;
OHNUMA, H ;
OKAMOTO, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 31 (06) :1846-&
[3]   HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04) :990-1034
[4]   NORMALIZED CHARACTERISTIC OF SATURATED HIGH-FIELD MOSFETS [J].
VANDERZI.A ;
NUSSBAUM, A .
SOLID-STATE ELECTRONICS, 1974, 17 (04) :413-414