EFFECTS OF PHOTOCHEMICAL VAPOR-DEPOSITION PHOSPHORUS-NITRIDE INTERFACIAL LAYER ON ELECTRICAL CHARACTERISTICS OF AU-INP SCHOTTKY DIODES

被引：24

作者：

JEONG, YH ^{[1
]}

KIM, GT ^{[1
]}

KIM, ST ^{[1
]}

KIM, KI ^{[1
]}

CHUNG, WJ ^{[1
]}

机构：

[1] RES INST IND SCI & TECHNOL,DEPT ELECTR & ELECTR ENGN,POHANG 790330,SOUTH KOREA

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 09期

关键词：

D O I：

10.1063/1.348972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The enhancement of Schottky barrier heights on InP substrate using a thin layer of phosphorus-nitride (P3N5), grown by a direct photochemical vapor deposition process with a gaseous mixture of PCl3 and NH3, has been studied. A Au-Schottky diode formed using the in situ processes has a 50-angstrom P3N5 intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and a reverse leakage current of 5.0 x 10(-8) angstrom/cm2 at 1 V. The breakdown voltage was larger than 30 V. The thin-film/InP interface was investigated using x-ray photoelectron spectroscopy.

引用

页码：6699 / 6700

页数：2

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