SCHOTTKY DIODE AND FIELD-EFFECT TRANSISTOR ON INP

被引：18

作者：

LOUALICHE, S

GINOUDI, A

LHARIDON, H

SALVI, M

LECORRE, A

LECROSNIER, D

FAVENNEC, PN

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 13期

关键词：

D O I：

10.1063/1.100727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1238 / 1240

页数：3

共 17 条

[1] HIGH-SPEED OPERATION OF INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHLORIDE VAPOR-PHASE EPITAXY [J].

ANTREASYAN, A ;

GARBINSKI, PA ;

MATTERA, VD ;

TEMKIN, H ;

ABELES, JH .

APPLIED PHYSICS LETTERS, 1987, 51 (14) :1097-1099

[2] X-BAND SELF-ALIGNED GATE ENHANCEMENT-MODE INP MISFETS [J].

ITOH, T ;

OHATA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :811-815

[3]

KAJIYAMA K, 1973, APPAL PHYS LETT, V23, P758

[4] SCHOTTKY AND FIELD-EFFECT TRANSISTOR FABRICATION ON INP AND GAINAS [J].

LOUALICHE, S ;

LHARIDON, H ;

LECORRE, A ;

LECROSNIER, D ;

SALVI, M ;

FAVENNEC, PN .

APPLIED PHYSICS LETTERS, 1988, 52 (07) :540-542

[5] SCHOTTKY BARRIERS AND OHMIC CONTACTS ON NORMAL-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FETS [J].

MORKOC, H ;

DRUMMOND, TJ ;

STANCHAK, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :1-5

[6] IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES [J].

OCONNOR, P ;

PEARSALL, TP ;

CHENG, KY ;

CHO, AY ;

HWANG, JCM ;

ALAVI, K .

ELECTRON DEVICE LETTERS, 1982, 3 (03) :64-66

[7] INP-METAL BARRIER JUNCTIONS WITH IMPROVED IV CHARACTERISTICS [J].

PEARSALL, TP ;

DIGIUSEPPE, MA .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :317-319

[8] HIGH-TRANSCONDUCTANCE HETEROSTRUCTURE GA0.47IN0.53AS/INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY [J].

SCHUBERT, EF ;

TSANG, WT ;

FEUER, MD ;

MANKIEWICH, PM .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) :145-147

[9]

SMITH PM, 1986, ELECTRON LETT, V22, P781

[10] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J].

SOLOMON, PM ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1015-1027

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