HIGH-SPEED OPERATION OF INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY CHLORIDE VAPOR-PHASE EPITAXY

被引：16

作者：

ANTREASYAN, A

GARBINSKI, PA

MATTERA, VD

TEMKIN, H

ABELES, JH

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 14期

关键词：

D O I：

10.1063/1.98752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1097 / 1099

页数：3

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