MONOLITHICALLY INTEGRATED ENHANCEMENT-MODE INP MISFET INVERTER

被引：4

作者：

ANTREASYAN, A

GARBINSKI, PA

MATTERA, VD

SHAH, NJ

TEMKIN, H

机构：

来源：

关键词：

D O I：

10.1049/el:19860693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1014 / 1016

页数：3

共 8 条

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[2] ANTRESYAN A, 1986, UNPUB APPL PHYS LETT
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[4] X-BAND SELF-ALIGNED GATE ENHANCEMENT-MODE INP MISFETS
ITOH, T
OHATA, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 811 - 815
[5] MONOLITHICALLY INTEGRATED IN0.53GA0.47AS-PIN/INP-MISFET PHOTORECEIVER
KASAHARA, K
HAYASHI, J
MAKITA, K
TAGUCHI, K
SUZUKI, A
NOMURA, H
MATUSHITA, S
[J]. ELECTRONICS LETTERS, 1984, 20 (08) : 314 - 315
[6] INTEGRATED PINFET OPTICAL RECEIVER WITH HIGH-FREQUENCY INP-MISFET
KASAHARA, K
SUGIMOTO, M
NOMURA, H
SUZUKI, S
[J]. ELECTRONICS LETTERS, 1983, 19 (22) : 905 - 906
[7] LOW-POWER HIGH-SPEED INP MISFET DIRECT-COUPLED FET LOGIC
MESSICK, LJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 763 - 766
[8] OHATA K, 1982, I PHYS C SER, V63, P353