GIGAHERTZ LOGIC GATES BASED ON INP-MISFETS WITH MINIMAL DRAIN CURRENT DRIFT

被引：14

作者：

PANDE, KP ^{[1
]}

FATHIMULLA, MA ^{[1
]}

GUTIERREZ, D ^{[1
]}

MESSICK, L ^{[1
]}

机构：

[1] USN,CTR OCEAN SYST,DIV ELECTR MAT SCI,SAN DIEGO,CA 92152

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 07期

关键词：

D O I：

10.1109/EDL.1986.26418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：407 / 409

页数：3

共 13 条

[1] REDUCTION OF FAST INTERFACE STATES AND SUPPRESSION OF DRIFT PHENOMENA IN ARSENIC-STABILIZED METAL-INSULATOR-INP STRUCTURES
BLANCHET, R
VIKTOROVITCH, P
CHAVE, J
SANTINELLI, C
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 761 - 763
[2] THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP
LILE, DL
TAYLOR, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 260 - 267
[3] INP MISFETS WITH PLASMA ANODIC AL2O3 AND INTERLAYED NATIVE OXIDE GATE INSULATORS
MATSUI, M
HIRAYAMA, Y
ARAI, F
SUGANO, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 308 - 310
[4] INDIRECT PLASMA DEPOSITION OF SILICON DIOXIDE
MEINERS, LG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 655 - 658
[5] LOW-POWER HIGH-SPEED INP MISFET DIRECT-COUPLED FET LOGIC
MESSICK, LJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 763 - 766
[6] CURRENT-DRIFT SUPPRESSED INP MISFETS WITH NEW GATE INSULATOR
MIKAMI, O
OKAMURA, M
YAMAGUCHI, E
HIROTA, Y
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (10): : 1408 - 1409
[7] CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
PANDE, KP
GUTIERREZ, D
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 416 - 418
[8] HIGH MOBILITY N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BASED ON SIO2-INP INTERFACE
PANDE, KP
NAIR, VKR
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3109 - 3114
[9] HIGH-SPEED INTEGRATED-CIRCUITS BASED ON INP-MISFETS WITH PLASMA SIO2 GATE INSULATOR
PANDE, KP
GUTIERREZ, D
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (10) : 1045 - 1048
[10] CAPLESS ANNEALING OF INP FOR METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR APPLICATIONS
PANDE, KP
NAIR, VRK
AINA, O
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 532 - 534

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