CURRENT-DRIFT SUPPRESSED INP MISFETS WITH NEW GATE INSULATOR

被引：8

作者：

MIKAMI, O

OKAMURA, M

YAMAGUCHI, E

HIROTA, Y

FURUKAWA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 10期

关键词：

D O I：

10.1143/JJAP.23.1408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1408 / 1409

页数：2

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (03): : 376 - 377
[2] CHEMICAL VAPOR-DEPOSITION OF PHOSPHORUS NITRIDE AND RELATED-COMPOUNDS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (08): : 1157 - 1158
[3] IMPROVED INTERFACE IN INVERSION-TYPE INP-MISFET BY VAPOR ETCHING TECHNIQUE
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KOBAYASHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) : 2151 - 2156
[4] INP HIGH MOBILITY ENHANCEMENT MISFETS USING ANODICALLY GROWN DOUBLE-LAYER GATE INSULATOR
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HASEGAWA, H
[J]. ELECTRONICS LETTERS, 1982, 18 (17) : 742 - 743
[5] CURRENT DRIFT PHENOMENA AND SPECTROSCOPIC MEASUREMENT METHOD FOR INSULATOR TRAP LEVEL PARAMETERS IN INP MISFETS
YAMAGUCHI, E
MINAKATA, M
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01): : L49 - L51