HIGH-SPEED INTEGRATED-CIRCUITS BASED ON INP-MISFETS WITH PLASMA SIO2 GATE INSULATOR

被引：5

作者：

PANDE, KP

GUTIERREZ, D

机构：

[1] Allied Corp, Bendix Aerospace, Technology Cent, Columbia, MD, USA, Allied Corp, Bendix Aerospace Technology Cent, Columbia, MD, USA

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 10期

关键词：

D O I：

10.1016/0038-1101(85)90037-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1045 / 1048

页数：4

共 11 条

[1] THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP
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[2] INP MISFETS WITH PLASMA ANODIC AL2O3 AND INTERLAYED NATIVE OXIDE GATE INSULATORS
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[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 308 - 310
[3] INDIRECT PLASMA DEPOSITION OF SILICON DIOXIDE
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[4] LOW-POWER HIGH-SPEED INP MISFET DIRECT-COUPLED FET LOGIC
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 763 - 766
[5] A HIGH-SPEED MONOLITHIC INP MISFET INTEGRATED-LOGIC INVERTER
MESSICK, LJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 218 - 221
[6] SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) : 2143 - 2150
[7] A NOVEL LOW-TEMPERATURE METHOD OF SIO2 FILM DEPOSITION FOR MOSFET APPLICATIONS
PANDE, KP
DAVIES, PW
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) : 593 - 602
[8] HIGH MOBILITY N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BASED ON SIO2-INP INTERFACE
PANDE, KP
NAIR, VKR
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3109 - 3114
[9] CAPLESS ANNEALING OF INP FOR METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR APPLICATIONS
PANDE, KP
NAIR, VRK
AINA, O
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 532 - 534
[10] PANDE KP, 1984, J APPL PHYS, V54, P5436

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