A NOVEL LOW-TEMPERATURE METHOD OF SIO2 FILM DEPOSITION FOR MOSFET APPLICATIONS

被引：5

作者：

PANDE, KP

DAVIES, PW

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 03期

关键词：

D O I：

10.1007/BF02656655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：593 / 602

页数：10

共 10 条

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