CAPLESS ANNEALING OF INP FOR METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR APPLICATIONS

被引：9

作者：

PANDE, KP

NAIR, VRK

AINA, O

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：532 / 534

页数：3

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