TRANSIENT ANNEALING OF INDIUM-PHOSPHIDE

被引：13

作者：

LILE, DL

COLLINS, DA

ZEISSE, CR

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 07期

关键词：

D O I：

10.1109/EDL.1983.25715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：231 / 233

页数：3

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[1] TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE USING A GRAPHITE STRIP HEATER
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 729 - 731
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (12) : 2333 - &
[6] LORENZO JP, 1982, NOV P LAS SOL INT S
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 655 - 658