MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED INDIUM-PHOSPHIDE

被引：7

作者：

GILL, SS

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 08期

关键词：

D O I：

10.1063/1.93657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：729 / 731

页数：3

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[5] PULSED LASER ANNEALING OF SELENIUM IMPLANTED INP
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (12) : 2333 - &
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